US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Dec. 9 for "Nitride-based semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,599, issued on Dec. 9, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Nitride-based semiconductor device and method for manufacturing the same" was invented by Yang Liu (Suzhou, China), Xiao Zhang (Suzhou, China), Jun Tang (Suzhou, China) and King Yuen Wong (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor device includes a source electrode and a drain electrode, a first gate electrode, and a second gate electrode. The first gate electrode is disposed between the source electrode and the drain electrode. The first gate electrode includes a first gate bottom portion and a first gate...