US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on April 29 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,920, issued on April 29, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Qiyue Zhao (Suzhou, China) and Yu Shi (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first and a second nitride-based semiconductor layers, a first and a second electrodes, a first and a second gate electrodes, a first and a second passivation layers and a conductive layer. The first passivation layer has a first portion covered with a first end portion of the first field plate and a second portion free from coverage of the first...