US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Oct. 7 for "Nitride-based wafer chemical vapor deposition device and deposition method of the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,419, issued on Oct. 7, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou, China).

"Nitride-based wafer chemical vapor deposition device and deposition method of the same" was invented by Tinglin You (Suzhou, China), Pi He (Suzhou, China) and Wen-Yuan Hsieh (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based wafer CVD device comprises a heat carrier, a nitride-based wafer, and a clamping ring. The heat carrier comprises a carrier surface. The nitride-based wafer is disposed on the carrier surface. The clamping ring is disposed above the carrier surface and the nitride-based wafer. The clamping ring comprises...