US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Oct. 14 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,287, issued on Oct. 14, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Yang Liu (Suzhou, China), Liang Chen (Suzhou, China), Xiao Zhang (Suzhou, China), Haoning Zheng (Suzhou, China) and King Yuen Wong (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first and a second nitride-based semiconductor layers and a gate structure. The gate structure includes an outer spacer, an inner spacer and a gate electrode. The outer spacer has at least two opposite inner sidewalls to define a gate trench. The inner...