US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on June 17 for "GaN-based semiconductor device with reduced leakage current and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,233, issued on June 17, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou, China).

"GaN-based semiconductor device with reduced leakage current and method for manufacturing the same" was invented by Xiao Zhang (Suzhou, China), Lijie Zhang (Suzhou, China), Jue Ouyang (Suzhou, China) and Wen-Yuan Hsieh (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having improved leakage current characteristics includes a semiconductor substrate with first and second nitride-based semiconductor layers so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region. A doped III-V nit...