US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Feb. 10 for "Nitride-based semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,357, issued on Feb. 10, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou, China).

"Nitride-based semiconductor device and method for manufacturing the same" was invented by Jian Rao (Suzhou, China), Jheng-Sheng You (Suzhou, China), Po-Wei Chen (Suzhou, China) and Ming-Hong Chang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a nitride-based layer, and a plurality of gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer ...