ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,461,417, issued on Nov. 4, was assigned to INNOLUX Corp. (Miao-Li County, Taiwan).
"Transistor substrate" was invented by Yung-Shun Yang (Miao-Li County, Taiwan), Chun-Liang Lin (Miao-Li County, Taiwan), Yi-Ching Chen (Miao-Li County, Taiwan) and Nai-Fang Hsu (Miao-Li County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor substrate is provided. The transistor substrate includes a first electrode and a second electrode. The first electrode has a slit. The slit includes a curved portion. The first electrode is used for receiving a common voltage signal. The second electrode overlaps the first electrode. The second electrode and the curv...