US Patent Issued to Innolux on Nov. 18 for "Driving substrate with a thin film transistor having overlapped metal layers and semiconductor layer" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,827, issued on Nov. 18, was assigned to Innolux Corp. (Miao-Li County, Taiwan).

"Driving substrate with a thin film transistor having overlapped metal layers and semiconductor layer" was invented by May Pan (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A driving substrate is provided. The driving substrate includes a substrate and a thin film transistor disposed on the substrate. The thin film transistor includes a first metal layer, a second metal layer, and a semiconductor. The first metal layer has a first portion, a second portion, and a first bridge. The second metal layer has a third portion, a fourth portion, and a second bri...