ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,223,205, issued on Feb. 11, was assigned to InnoGrit Technologies Co. Ltd. (Shanghai).
"Systems, methods and devices for reading a memory of a storage device" was invented by Hongsen Yu (San Jose, Calif.), Shawn Chen (San Jose, Calif.), Gang Zhao (Chandler, Ariz.), Wei Jiang (Fremont, Calif.) and Lin Chen (Cupertino, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are systems, methods and devices for controlling output of a storage device during read operations. The method comprises: measuring a length of a temporal gap between first and second consecutive read bursts from a storage device, the first and second read burst are in r...