ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,935, issued on May 20, was assigned to INNODISK Corp. (New Taipei, Taiwan).
"High capacitance memory device" was invented by Chih-Chieh Kao (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high capacitance memory device comprises a printed circuit board provided with a plurality of metal connection pads and at least one capacitor core is arranged on the printed circuit board. The capacitor core has connection pins and is electrically connected to the metal connection pads through a conductive glue. An adhesive layer covers the capacitor core. A memory module is set on the printed circuit board and electrically connected to the ca...