US Patent Issued to Infineon Technologies on Sept. 9 for "Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device" (Austrian, German Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,740, issued on Sept. 9, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device" was invented by Iris Moder (Villach, Austria), Bernhard Goller (Villach, Austria), Tobias Franz Wolfgang Hoechbauer (Villach, Austria), Roland Rupp (Lauf, Germany), Francisco Javier Santos Rodriguez (Villach, Austria) and Hans-Joachim Schulze (Taufkirchen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. Th...