ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,395, issued on Sept. 30, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Semiconductor power module with crack sensing" was invented by Charles Rimbert-Riviere (Soest, Germany) and Arne Eilers (Soest, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing a power semiconductor module includes providing a power electronics carrier that includes a structured metallization layer disposed on an electrically insulating substrate layer, performing a production step of the power semiconductor module using the power electronics carrier, using a sensor to obtain crack information during the production step, the crack in...