US Patent Issued to Infineon Technologies on Sept. 23 for "Semiconductor device with diode chain connected to gate metallization" (German, Austrian Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,350, issued on Sept. 23, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device with diode chain connected to gate metallization" was invented by Joachim Weyers (Hoehenkirchen, Germany), Anton Mauder (Kolbermoor, Germany), Ralf Siemieniec (Villach, Austria) and Guang Zeng (Haar, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor cell with a source region of a first conductivity type and a gate electrode. The source region is formed in a wide bandgap semiconductor portion. A diode chain includes a plurality of diode structures. The diode structures are formed in the wide ...