US Patent Issued to Infineon Technologies on Sept. 23 for "Power semiconductor device and method of producing a power semiconductor device" (Austrian, German Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,331, issued on Sept. 23, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor device and method of producing a power semiconductor device" was invented by Damiano Cassese (Villach, Austria), Andreas Korzenietz (Putzbrunn, Germany), Holger Schulze (Villach, Austria) and Frank Umbach (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing a power semiconductor device includes: providing a semiconductor body; forming, at the semiconductor body, a polycrystalline semiconductor region; forming, at the polycrystalline semiconductor region, an amorphous sublayer; subjecting the amorphous sublayer to a re...