US Patent Issued to INFINEON TECHNOLOGIES on Sept. 2 for "Silicon carbide device with stripe-shaped gate electrode and source metallization" (Austrian, German Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,410, issued on Sept. 2, was assigned to INFINEON TECHNOLOGIES AG (Neubiberg, Germany).

"Silicon carbide device with stripe-shaped gate electrode and source metallization" was invented by Ralf Siemieniec (Villach, Austria) and Dethard Peters (Hoechstadt, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an example, a silicon carbide device includes a silicon carbide body. The silicon carbide body includes a central region and a peripheral region surrounding the central region. The central region includes a source region of a first conductivity type. The peripheral region includes a doped region of a second conductivity type. A stripe-shaped g...