US Patent Issued to INFINEON TECHNOLOGIES on Sept. 16 for "Transistor device and method of manufacturing" (German, Austrian Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,096, issued on Sept. 16, was assigned to INFINEON TECHNOLOGIES AG (Neubiberg, Germany).

"Transistor device and method of manufacturing" was invented by Ralf Siemieniec (Villach, Austria), Ingo Muri (Villach, Austria), Till Schloesser (Munich), Hans-Joachim Schulze (Taufkirchen, Germany) and Olaf Storbeck (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device is provided. In an example, the transistor device includes a semiconductor body having a first main surface, a second main surface opposite to the first main surface. The transistor device further includes a transistor cell array including a plurality of transistor...