US Patent Issued to Infineon Technologies on Oct. 7 for "Semiconductor device including a field stop region" (German, Austrian Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,002, issued on Oct. 7, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device including a field stop region" was invented by Moriz Jelinek (Villach, Austria), Thomas Waechtler (Chemnitz, Germany), Bernd Bitnar (Bannewitz, Germany), Daniel Schloegl (Villach, Austria), Hans-Joachim Schulze (Taufkirchen, Germany), Oana Julia Spulber (Neubiberg, Germany), Benedikt Stoib (Feldkirchen-Westerham, Germany) and Christian Krueger (Liegau-Augustusbad, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped fi...