US Patent Issued to Infineon Technologies on Oct. 7 for "High frequency devices including attenuating dielectric materials" (German Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,107, issued on Oct. 7, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"High frequency devices including attenuating dielectric materials" was invented by Pietro Brenner (Ebersberg, Germany), Walter Hartner (Bad Abbach-Peissing, Germany), Julian Winfried Kaiser (Munich) and Saqib Kaleem (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a high frequency chip and a dielectric material arranged between a first area radiating an electromagnetic interference signal in a first frequency range between 1 GHz and 1 THz and a second area receiving the electromagnetic interference signal. An attenuation of the dielectric ma...