ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,285, issued on Oct. 14, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Group III nitride-based transistor device" was invented by Helmut Brech (Lappersdorf, Germany) and John Twynam (Regensburg, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Group III nitride-based transistor device is provided that has a gate drain capacitance (CGD), a drain source capacitance (CDS) and a drain source on resistance (RDSon). A ratio of the gate drain capacitance (CGD) at a drain source voltage (VDS) of 0V, CGD (0V), and the gate drain capacitance CGD at a value of VDSless than0V, CGDV, is at least 3:1, wherein VDS is less than 15V."
The p...