US Patent Issued to Infineon Technologies on Oct. 14 for "Dynamic sensing levels for nonvolatile memory devices" (Israeli, American Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,446, issued on Oct. 14, was assigned to Infineon Technologies LLC (San Jose, Calif.).

"Dynamic sensing levels for nonvolatile memory devices" was invented by Shivananda Shetty (Fremont, Calif.), Yoram Betser (Mazkeret-Batya, Israel), Pawan Singh (Cupertino, Calif.), Stefano Amato (Sunnyvale, Calif.) and Alexander Kushnarenko (Haifa, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods, and devices dynamically determine sensing levels for memory devices. Devices include nonvolatile memory cells included in a plurality of memory sectors, a plurality of static reference cells configured to represent a first reference value for disting...