US Patent Issued to INFINEON TECHNOLOGIES on Nov. 4 for "Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device" (Austrian, German Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,037, issued on Nov. 4, was assigned to INFINEON TECHNOLOGIES AG (Neubiberg, Germany).

"Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device" was invented by Werner Schustereder (Villach, Austria), Ravi Keshav Joshi (Klagenfurt, Austria), Hans-Joachim Schulze (Taufkirchen, Germany), Ralf Siemieniec (Villach, Austria) and Axel Koenig (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to methods of manufacturing Ohmic contacts on a silicon carbide (SiC) substrate including providing a 4H-SiC or 6H-SiC substrate, i...