ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,800, issued on Nov. 18, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Semiconductor diode and manufacturing method" was invented by Thomas Ralf Siemieniec (Villach, Austria), Joachim Weyers (Hohenkirchen, Germany) and Armin Tilke (Dresden, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor diode includes a wide bandgap semiconductor body having opposing first and second surfaces. The wide band gap semiconductor body includes a first pn junction diode having a first p-doped region adjoining the first surface and a first n-doped region adjoining both surfaces. The semiconductor diode further includes a semiconduct...