ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,341, issued on Nov. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Method of fabricating a semiconductor device" was invented by Helmut Brech (Lappersdorf, Germany), Carsten Ahrens (Regensburg, Germany) and Matthias Zigldrum (Regensburg, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes: epitaxially growing a multilayer Group-III nitride structure on a first surface of a substrate; removing portions of the multilayer structure to form a mesa arranged on the first surface; applying insulating material to the first surface of the substrate so that side faces of the mesa ...