US Patent Issued to Infineon Technologies on Nov. 11 for "Integrated circuit and bipolar transistor" (Austrian, German Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,301, issued on Nov. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Integrated circuit and bipolar transistor" was invented by Gerhard Prechtl (Rosegg, Austria), Andreas Peter Meiser (Sauerlach, Germany) and Thomas Ostermann (Koestenburg, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a semiconductor substrate, first and second doping regions in the substrate, a first insulating layer on a first surface of the semiconductor substrate, the first insulating layer having first and second openings above the first and second doping regions, a polysilicon layer on the first insulating layer, the p...