US Patent Issued to Infineon Technologies on May 6 for "Vertical power semiconductor device including silicon carbide (sic) semiconductor body" (German, Austrian Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,018, issued on May 6, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Vertical power semiconductor device including silicon carbide (sic) semiconductor body" was invented by Thomas Aichinger (Faak am See, Austria), Dethard Peters (Hochstadt, Germany), Michael Hell (Erlangen, Germany) and Andreas Hurner (Heroldsberg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device is proposed. The vertical power semiconductor device includes a silicon carbide (SiC) semiconductor body having a first surface and a second surface opposite to the first surface. The SiC semiconductor body includes a transistor cell area ...