US Patent Issued to INFINEON TECHNOLOGIES on May 13 for "Semiconductor device with metal silicide layer" (Austrian Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,654, issued on May 13, was assigned to INFINEON TECHNOLOGIES AG (Neubiberg, Germany).

"Semiconductor device with metal silicide layer" was invented by Mark Harrison (Wernberg, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first surface of a metal silicide layer may be treated with an oxidizing agent to oxidize metal silicide protrusions on the first surface of the metal silicide layer. After treating the first surface with the oxidizing agent, the first surface may be treated wi...