US Patent Issued to Infineon Technologies on May 13 for "Method of manufacturing silicon carbide semiconductor devices" (German Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,724, issued on May 13, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Method of manufacturing silicon carbide semiconductor devices" was invented by Andreas Meiser (Sauerlach, Germany), Caspar Leendertz (Munich), Anton Mauder (Kolbermoor, Germany) and Roland Rupp (Lauf, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body, the trench structure having a gate electrode that is dielectrically insulated from the semiconductor body, a shielding region adjoining a bottom of the trench structure and forming a first ...