US Patent Issued to Infineon Technologies on March 18 for "Semiconductor device including first gate electrode and second gate electrode" (German Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,251, issued on March 18, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device including first gate electrode and second gate electrode" was invented by Roman Baburske (Otterfing, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a drift region of a first conductivity type in a semiconductor body having a first main surface; a body region of a second conductivity type between the drift region and the first main surface; and trenches extending into the semiconductor body from the first main surface and patterning the semiconductor body into mesas. The trenches include: a first tren...