US Patent Issued to INFINEON TECHNOLOGIES on June 3 for "Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device" (German Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,323,134, issued on June 3, was assigned to INFINEON TECHNOLOGIES AG (Neubiberg, Germany).

"Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device" was invented by Roman Baburske (Otterfing, Germany), Frank Pfirsch (Munich), Jana Hansel (Dresden, Germany) and Katja Waschneck (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first s...