US Patent Issued to Infineon Technologies on June 3 for "Power semiconductor device and method" (German, Malaysian Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,186, issued on June 3, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor device and method" was invented by Edward Fuergut (Dasing, Germany), Philipp Sebastian Koch (Gelugor, Malaysia), Stephan Pindl (Ergoldsbach, Germany) and Hans-Joachim Schulze (Taufkirchen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a semiconductor body having a front side surface, and a first passivation layer arranged above the front side surface. The first passivation layer is a polycrystalline diamond layer."

The patent was filed on Aug. 27, 2020, under Application No. 17/004,187.

*For furth...