US Patent Issued to Infineon Technologies on June 24 for "Method for annealing a gate insulation layer on a wide band gap semiconductor substrate" (Austrian Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,012, issued on June 24, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Method for annealing a gate insulation layer on a wide band gap semiconductor substrate" was invented by Thomas Aichinger (Faak am See, Austria), Gerald Rescher (Bruckl, Austria) and Michael Stadtmueller (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the fir...