US Patent Issued to Infineon Technologies on June 24 for "Memory device and method for testing the memory device that bypasses memory cells" (German Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,843, issued on June 24, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Memory device and method for testing the memory device that bypasses memory cells" was invented by Thomas Kern (Aschheim, Germany) and Sebastian Kiesel (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device comprises at least one non-volatile memory cell, a write circuit configured to write to the at least one memory cell, and a read circuit configured to read from the at least one memory cell, wherein the memory device is configured to be operable in a test operating mode, in which at least one test path can be test...