US Patent Issued to Infineon Technologies on June 17 for "Power semiconductor device with dual heat dissipation structures" (Malaysian Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,414, issued on June 17, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor device with dual heat dissipation structures" was invented by Jayaganasan Narayanasamy (Melaka-Durian Tunggal, Malaysia), Angel Enverga (Melaka, Malaysia), Chii Shang Hong (Melaka, Malaysia), Chee Ming Lam (Melaka, Malaysia), Sanjay Kumar Murugan (Melaka, Malaysia) and Subaramaniym Senivasan (Bemban, Malaysia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A molded semiconductor package includes: a semiconductor die; a substrate attached to a first side of the semiconductor die; a plurality of leads electrically connected to a second side of th...