ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,413, issued on July 22, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Circuit and method for biasing a transistor and corresponding device" was invented by Herwig Wappis (Villach, Austria), Peter Singerl (Villach, Austria), Martin Mataln (Rosegg, Austria) and Gerhard Maderbacher (Gleisdorf, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit for biasing a transistor is provided. The circuit includes an output terminal configured to be coupled to a gate terminal of the transistor and circuitry. In a first state, the circuitry is configured to output a control signal at a first voltage level for setting the transistor to...