US Patent Issued to Infineon Technologies on Jan. 28 for "Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer" (German, Austrian Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,703, issued on Jan. 28, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer" was invented by Hans-Joachim Schulze (Taufkirchen, Germany), Alexander Breymesser (Villach, Austria), Bernhard Goller (Villach, Austria), Matthias Kuenle (Villach, Austria), Helmut Oefner (Zorneding, Germany), Francisco Javier Santos Rodriguez (Villach, Austria) and Stephan Voss (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the ...