ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,971, issued on Jan. 13, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Gate control method of MOS-gated power device" was invented by Guang Zeng (Haar, Germany), Franz-Josef Niedernostheide (Hagen am Teutoburger Wald, Germany), Mark-Matthias Bakran (Erlangen, Germany) and Zheming Li (Bayreuth, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off accordi...