ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,084, issued on Feb. 4, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Overvoltage protection device with trench contact" was invented by Andre Schmenn (Sachsenkam, Germany), Isabella Goetz (Bodenwoehr, Germany) and Egle Tylaite (Munich).
According to the abstract* released by the U.S. Patent & Trademark Office: "An overvoltage protection device includes a semiconductor body including a substrate region disposed beneath an upper surface of the semiconductor body, first and second contact pads disposed over the upper surface of the semiconductor body, a trenched connector formed in the semiconductor body, a vertical voltage blocking device formed in the semiconducto...