US Patent Issued to Infineon Technologies on Feb. 18 for "Method of forming oxide-nitride-oxide stack of non-volatile memory and integration to CMOS process flow" (Texas, California Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,324, issued on Feb. 18, was assigned to Infineon Technologies LLC (San Jose, Calif.).

"Method of forming oxide-nitride-oxide stack of non-volatile memory and integration to CMOS process flow" was invented by Michael Allen (Buda, Texas) and Krishnaswamy Ramkumar (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method of a semiconductor device is described. Generally, the method includes forming a customizable oxide-nitride-oxide (ONO) stack over a substrate in an in-situ atomic layer deposition (ALD) tool or chamber. Radical oxidation or oxide deposition process steps are performed to form tunnel dielectric layer overlyi...