US Patent Issued to Infineon Technologies on Feb. 17 for "Transistor device with highly doped source and drain regions" (German, Austrian Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,326, issued on Feb. 17, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Transistor device with highly doped source and drain regions" was invented by Jurgen Faul (Radebeul, Germany), Andreas Urban Bertl (Villach, Austria), Ewa Kowalska (Dresden, Germany) and Henning Feick (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes: a semiconductor substrate having a doping concentration of a first dopant type; a highly doped source region of a second dopant type formed in a first surface of the semiconductor substrate; a first highly doped drain region of the second dopant type formed in the first surface; a g...