US Patent Issued to Infineon Technologies on Feb. 17 for "Power semiconductor module and method of producing a power semiconductor module" (German Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,671, issued on Feb. 17, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor module and method of producing a power semiconductor module" was invented by Achim Althaus (Regensburg, Germany), Andreas Groove (Ruthen, Germany) and Christoph Liebl (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor module includes an AC bus bar having a first side that faces a first substrate and a second side that faces a second substrate. A first power transistor die has a drain terminal connected to a first metallic region of the first substrate and a source terminal connected to the first side of the AC bus bar...