US Patent Issued to Infineon Technologies on Dec. 9 for "Power semiconductor device and method of producing a power semiconductor device" (German Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,431, issued on Dec. 9, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor device and method of producing a power semiconductor device" was invented by Christian Hammer (Lappersdorf, Germany), Matthias Mueller (Regensburg, Germany) and Wolfgang Lehnert (Lintach, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a semiconductor body; a first load terminal at the semiconductor body; and a second load terminal at the semiconductor body. The power semiconductor device is configured to conduct a load current between the first load terminal and the second load terminal. The first lo...