US Patent Issued to Infineon Technologies on Dec. 30 for "Semiconductor device including a field stop region" (German, Austrian Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,921, issued on Dec. 30, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device including a field stop region" was invented by Benedikt Stoib (Feldkirchen-Westerham, Germany), Moriz Jelinek (Villach, Austria), Marten Mueller (Schliersee, Germany), Daniel Schloegl (Villach, Austria), Hans-Joachim Schulze (Taufkirchen, Germany) and Holger Schulze (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a ...