ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,321, issued on Dec. 30, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Method of manufacturing a semiconductor device" was invented by Moriz Jelinek (Villach, Austria), Hans-Joachim Schulze (Taufkirchen, Germany), Werner Schustereder (Villach, Austria), Daniel Schlogl (Villach, Austria) and Francisco Javier Santos Rodriguez (Villach, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. Semiconductor device elements are formed in the semiconductor body by processing the semiconductor body at the first su...