US Patent Issued to Infineon Technologies on Dec. 2 for "Field effect transistor having a dielectric structure" (German Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,479, issued on Dec. 2, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Field effect transistor having a dielectric structure" was invented by Chi Dong Nguyen (Munich) and Till Schlosser (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor, FET, is proposed. The FET includes a source region of a first conductivity type that is electrically connected to a source electrode at a first surface of a semiconductor body. The FET further includes a drain region of the first conductivity type that is electrically connected to a drain electrode at the first surface. A dielectric structure is arranged between the sourc...