US Patent Issued to Infineon Technologies on Dec. 16 for "Power semiconductor module, method for assembling a power semiconductor module and housing for a power semiconductor module" (German Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,152, issued on Dec. 16, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor module, method for assembling a power semiconductor module and housing for a power semiconductor module" was invented by Ulrich Nolten (Ruthen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor module includes: a substrate with a metallization layer attached to a dielectric insulation layer and a semiconductor body mounted to the metallization layer; a housing at least partly enclosing the substrate and having sidewalls and a cover that at least partly covers an opening formed by the sidewalls and has a flexible port...