US Patent Issued to INFINEON TECHNOLOGIES on Dec. 16 for "Method of manufacturing a metal silicide layer above a silicon carbide substrate, and semiconductor device comprising a metal silicide layer" (Austrian, German Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,086, issued on Dec. 16, was assigned to INFINEON TECHNOLOGIES AG (Neubiberg, Germany).

"Method of manufacturing a metal silicide layer above a silicon carbide substrate, and semiconductor device comprising a metal silicide layer" was invented by Hans-Joachim Schulze (Taufkirchen, Germany), Florian Markus Grasse (St. Stefan im Gailtal, Austria), Moriz Jelinek (Villach, Austria), Axel Konig (Villach, Austria), Gregor Langer (Wolfnitz, Austria), Bernhard Leitl (Klagenfurt, Austria), Kristijan Luka Mletschnig (Klagenfurt, Austria) and Werner Schustereder (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a metal s...