US Patent Issued to Infineon Technologies on Dec. 16 for "Mesa contact for MOS controlled power semiconductor device" (German Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,669, issued on Dec. 16, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Mesa contact for MOS controlled power semiconductor device" was invented by Ute Queitsch (Dresden, Germany), Roman Baburske (Otterfing, Germany), Ingo Dirnstorfer (Dresden, Germany) and Hans-Juergen Thees (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes: a first load terminal at a first side, a second load terminal, and a semiconductor body coupled to the load terminals and configured to conduct a load current between the load terminals; and trenches at the first side and extending into the semiconductor body ...