US Patent Issued to Infineon Technologies on Aug. 5 for "Power semiconductor device having nanometer-scale structure" (German Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,677, issued on Aug. 5, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor device having nanometer-scale structure" was invented by Anton Mauder (Kolbermoor, Germany), Franz-Josef Niedernostheide (Hagen am Teutoburger Wald, Germany) and Christian Philipp Sandow (Haar, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, an active cell field in the body, and a plurality of first and second cells in the active cell field. Each cell is electrically connected to the first load terminal structure and to a drift...