US Patent Issued to Infineon Technologies on Aug. 26 for "Inducing mechanical stress in magnetoresistive sensing element to align magnetization axis of reference layer system in preferred direction for improved sensor performance" (German Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,399,236, issued on Aug. 26, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Inducing mechanical stress in magnetoresistive sensing element to align magnetization axis of reference layer system in preferred direction for improved sensor performance" was invented by Bernhard Endres (Nabburg, Germany), Jurgen Forster (Tegernheim, Germany) and Andreas StraBer (Regensburg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive sensor includes a sensing element and a stress inducing layer. The sensing element has a layer stack that includes a reference layer having a fixed reference magnetization aligned with a magnetization...