US Patent Issued to Infineon Technologies on April 8 for "Methods of forming semiconductor devices in a layer of epitaxial silicon carbide" (German, Austrian Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,738, issued on April 8, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Methods of forming semiconductor devices in a layer of epitaxial silicon carbide" was invented by Hans-Joachim Schulze (Taufkirchen, Germany), Roland Rupp (Lauf, Germany) and Francisco Javier Santos Rodriguez (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: providing a layer of porous silicon carbide supported by a silicon carbide substrate; providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide; forming semiconductor devices in the layer of epitaxial silicon carbide; and separating the silicon car...